Semiconductor devices and method for forming semiconductor devices

• Main Authors: CHRISTOPH GRUBER, JUERGEN STEINBRENNER, ANDREAS HAGHOFER, MARTIN POELZL, JOHANNES BAUMGARTL, RAVI KESHAV JOSHI
• Format: Patent
• Language: Chinese; English
• Published: 11.01.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a semiconductor laminar structure arranged on a semiconductor substrate. The semiconductor laminar structure includes a first doping region of a field effect transistor structure and at least a part of a body region of the field effect transistor structure. The body region has a first conductivity type and the first doping region has a second conductivity type. The semiconductor device further includes an electrically conductive contact structure providing an electrical contact to the first doping region of the field effect transistor structure and to the body region of the field effect transistor structure at one or more sidewalls of the semiconductor laminar structure. 种半导体装置，包括布置在半导体基板上的半导体层状结构。半导体层状结构包括场效应晶体管结构的第掺杂区域和场效应晶体管结构的本体区域的至少部分。本体区域具有第导电性类型，且第掺杂区域具有第二导电性类型。半导体装置包括导电接触结构，所述导电接触结构在半导体层状结构的至少个侧壁处提供到场效应晶体管结构的第掺杂区域的和到场效应晶体管结构的本体区域的电接触。