Nonvolatile memory and manufacturing method therefor

• Main Authors: ZHENG ZONGWEN, ZHENG YUMING
• Format: Patent
• Language: Chinese; English
• Published: 11.01.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a nonvolatile memory and a manufacturing method therefor. The nonvolatile memory comprises storage units, wherein the storage unit comprises a stacked gate structure, a floating gate, a tunneling dielectric layer, an erasing gate dielectric layer, an auxiliary gate dielectric...