Nonvolatile memory and manufacturing method therefor

• Main Authors: ZHENG ZONGWEN, ZHENG YUMING
• Format: Patent
• Language: Chinese; English
• Published: 11.01.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a nonvolatile memory and a manufacturing method therefor. The nonvolatile memory comprises storage units, wherein the storage unit comprises a stacked gate structure, a floating gate, a tunneling dielectric layer, an erasing gate dielectric layer, an auxiliary gate dielectric layer, a source region and a drain region, a control gate and an inter-gate dielectric layer, wherein the stacked gate structure is provided with a gate dielectric layer, an auxiliary gate, an insulating layer and an erasing gate which are arranged in sequence; the floating gate is arranged on the side wall on the first side of the stacked gate structure; a corner part is arranged on the top of the floating gate; the corner part is coated with the erasing gate; the tunneling dielectric layer is arranged below the floating gate; the erasing gate dielectric layer is arranged between the erasing gate and the floating gate; the auxiliary gate dielectric layer is arranged between the auxiliary gate and the floating gate