Nonvolatile memory and manufacturing method therefor
The invention provides a nonvolatile memory and a manufacturing method therefor. The nonvolatile memory comprises storage units, wherein the storage unit comprises a stacked gate structure, a floating gate, a tunneling dielectric layer, an erasing gate dielectric layer, an auxiliary gate dielectric...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
11.01.2017
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Subjects | |
Online Access | Get full text |
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Abstract | The invention provides a nonvolatile memory and a manufacturing method therefor. The nonvolatile memory comprises storage units, wherein the storage unit comprises a stacked gate structure, a floating gate, a tunneling dielectric layer, an erasing gate dielectric layer, an auxiliary gate dielectric layer, a source region and a drain region, a control gate and an inter-gate dielectric layer, wherein the stacked gate structure is provided with a gate dielectric layer, an auxiliary gate, an insulating layer and an erasing gate which are arranged in sequence; the floating gate is arranged on the side wall on the first side of the stacked gate structure; a corner part is arranged on the top of the floating gate; the corner part is coated with the erasing gate; the tunneling dielectric layer is arranged below the floating gate; the erasing gate dielectric layer is arranged between the erasing gate and the floating gate; the auxiliary gate dielectric layer is arranged between the auxiliary gate and the floating gate |
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AbstractList | The invention provides a nonvolatile memory and a manufacturing method therefor. The nonvolatile memory comprises storage units, wherein the storage unit comprises a stacked gate structure, a floating gate, a tunneling dielectric layer, an erasing gate dielectric layer, an auxiliary gate dielectric layer, a source region and a drain region, a control gate and an inter-gate dielectric layer, wherein the stacked gate structure is provided with a gate dielectric layer, an auxiliary gate, an insulating layer and an erasing gate which are arranged in sequence; the floating gate is arranged on the side wall on the first side of the stacked gate structure; a corner part is arranged on the top of the floating gate; the corner part is coated with the erasing gate; the tunneling dielectric layer is arranged below the floating gate; the erasing gate dielectric layer is arranged between the erasing gate and the floating gate; the auxiliary gate dielectric layer is arranged between the auxiliary gate and the floating gate |
Author | ZHENG YUMING ZHENG ZONGWEN |
Author_xml | – fullname: ZHENG ZONGWEN – fullname: ZHENG YUMING |
BookMark | eNrjYmDJy89L5WQw8cvPK8vPSSzJzElVyE3NzS-qVEjMS1HITcwrTUtMLiktysxLB0qUZOSnKJRkpBalpuUX8TCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeGc_QwMzYyMLM1NjR2Ni1AAAdo0vKA |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 非易失性存储器及其制造方法 |
ExternalDocumentID | CN106328653A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_CN106328653A3 |
IEDL.DBID | EVB |
IngestDate | Fri Aug 02 08:54:56 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | Chinese English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_CN106328653A3 |
Notes | Application Number: CN201510393338 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170111&DB=EPODOC&CC=CN&NR=106328653A |
ParticipantIDs | epo_espacenet_CN106328653A |
PublicationCentury | 2000 |
PublicationDate | 20170111 |
PublicationDateYYYYMMDD | 2017-01-11 |
PublicationDate_xml | – month: 01 year: 2017 text: 20170111 day: 11 |
PublicationDecade | 2010 |
PublicationYear | 2017 |
RelatedCompanies | ZHENG YUMING IOTMEMORY TECHNOLOGY INC ZHENG ZONGWEN |
RelatedCompanies_xml | – name: ZHENG YUMING – name: IOTMEMORY TECHNOLOGY INC – name: ZHENG ZONGWEN |
Score | 3.1890233 |
Snippet | The invention provides a nonvolatile memory and a manufacturing method therefor. The nonvolatile memory comprises storage units, wherein the storage unit... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Nonvolatile memory and manufacturing method therefor |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170111&DB=EPODOC&locale=&CC=CN&NR=106328653A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwGP2YU9Q3nYrOCxGkb0WyXrKXIi5tGYLdkCl7G00T0OHS4TpEf71fYud80beQQG7kJCeXcwJwpXCYSMak22GKuT4tmJsj5lwqAuFLpCihsm6fWdh_9O_GwbgB05UWxvqEvltzRERUgXiv7Hw9Xx9ixfZt5eJavGBUeZOOotipd8fGXByxG_eiZDiIB9zhPOKZkz0g1w09I8L0bjdg09Bo47OfPPWMKmX-e0lJ92BriLnpah8an88t2OGrn9dasH1fX3hjsMbe4gD8rNQ4l2DlXhWZmQeyHyTXksxyvTTyBKs3JN8_QhND6xTy0UO4TJMR77tY_OSnrROerWvqHUFTl1odA-lI6TMmCkmlUZPm3byrBAuNho4KGQQn0P47n_Z_iaewa_rNnCpQegbN6m2pznGdrcSF7aAv3jyCYg |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwGP2YU5xvOhWdtwrStyJdL9lLEZeuVN2yIVX2VpoloOLa4TpEf71fYud80beQQG7kJCeXcwJwIXGYCEKE1SaSWK49IVaGmLNs7nFXIEXxpXb7ZH784N6OvXENXpZaGO0T-q7NERFRE8R7qefr2eoQK9RvK-eX_BmjiqsoCUKz2h0rc3HEbtgNeqNhOKQmpQFlJrtHrus7SoTpXK_BOlHuvIo6PXaVKmX2e0mJtmFjhLnl5Q7UPp-a0KDLn9easDmoLrwxWGFvvgsuK3KcS7Byr9KYqgeyH0aWC2Oa5QslT9B6Q-P7R2hD0TqJfHQPzqNeQmMLi09_2ppStqqpsw_1vMjlARhtIVxC-ETYQqlJs07WkZz4SkNnc-F5h9D6O5_Wf4ln0IiTQT_t37C7I9hSfahOGGz7GOrl20Ke4Jpb8lPdWV8f2YVP |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Nonvolatile+memory+and+manufacturing+method+therefor&rft.inventor=ZHENG+ZONGWEN&rft.inventor=ZHENG+YUMING&rft.date=2017-01-11&rft.externalDBID=A&rft.externalDocID=CN106328653A |