SnZnO buffer layer for solar cell

• Main Authors: LI ZHIBIN, WANG CHUNZAO, SHI JIAHUI, WEI LEIJIE
• Format: Patent
• Language: Chinese; English
• Published: 04.01.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses an SnZnO buffer layer for a solar cell. The preparation method for the SnZnO buffer layer comprises the following steps that 1, zinc acetate is added in absolute ethyl alcohol, after stirring is conducted to be uniform, acetic acid is dropwise added and stirred to be uniform, then zinc acetate solution is formed; 2, diethanol amine is added to the zinc acetate solution, and organotin salt is added at the same time, stirring is conducted to form zinc tin mixed solution; 3, the zinc tin mixed solution is placed in a reaction kettle, then EDTA is added, and after being stirred evenly, aeration reaction is conducted for 3-5 hours; 4, the mixed solution after the aeration reaction is subjected to distillative reaction for 2-4 hours, thus mixed concentrated solution is obtained; 5, dispersing agent is added in the mixed concentrated solution for low-temperature stirring, still standing and aging are conducted for 3-8 hours; 6, the mixed concentrated solution after still standing and aging is