Gallium nitride-based light-emitting diode and fabrication method thereof

• Main Authors: XIA ZHANGGEN, HONG LINGYUAN, LIN SUHUI, HE ANHE, HUANG YUJIE, PENG KANGWEI
• Format: Patent
• Language: Chinese; English
• Published: 21.12.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a gallium nitride-based light-emitting diode and a fabrication method thereof. The fabrication method of the gallium nitride-based light-emitting diode includes the following steps that: a growth substrate is provided; a light-emitting epitaxial layer is grown on the growth substrate, wherein the light-emitting epitaxial layer comprise a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are distributed sequentially from bottom to top; the second semiconductor layer is etched, so that an opening structure can be formed and extends to the first semiconductor layer, so that a part of the first semiconductor layer is exposed; a first metal electrode layer and a second metal electrode layer are fabricated, and the first metal electrode layer and the second metal electrode layer cover the exposed first semiconductor layer and the exposed second semiconductor layer; metal adhesion layers are fabricated, and openings are formed in the metal adhesion layers