System and Method for a Gate Driver

In accordance with an embodiment, method of controlling a switching transistor includes applying a first voltage to a first node of a switchable tank circuit, where the first node is coupled to a control node of the switching transistor, the first voltage has a first polarity with respect to a refer...

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Bibliographic Details
Main Authors SYED HADIUZZAMAN, LEONG KENNITH KIN, NOTSCH CHRIS J
Format Patent
LanguageChinese
English
Published 14.12.2016
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Summary:In accordance with an embodiment, method of controlling a switching transistor includes applying a first voltage to a first node of a switchable tank circuit, where the first node is coupled to a control node of the switching transistor, the first voltage has a first polarity with respect to a reference terminal of the switching transistor, and the first voltage is configured to place the switching transistor into a first state. After applying the first voltage, the switchable tank circuit is activated, where a voltage of the first node transitions from the first voltage to a second voltage that is configured to place the switching transistor in a second state different from the first state. The switchable tank circuit is deactivated after the voltage of the first node attains the second polarity. 根据实施例,种控制开关晶体管的方法包括向可开关振荡电路的第节点施加第电压,其中第节点耦合到开关晶体管的控制节点,第电压相对于开关晶体管的参考端子具有第极性,并且第电压被配置成将开关晶体管置于第状态。在施加第电压之后,可开关振荡电路被激活,其中第节点的电压从第电压向第二电压转变,第二电压被配置成将开关晶体管置于不同于第状态的第二状态。可开关振荡电路在第节点的电压达到第二极性之后被去激活。
Bibliography:Application Number: CN201610319315