FBAR (Film Bulk Acoustic Resonator) and preparation method thereof

• Main Authors: HUA DI, CAI CHUNHUA, TAN DUNYAN, QI BENSHENG
• Format: Patent
• Language: Chinese; English
• Published: 16.11.2016
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS

The invention discloses a FBAR (Film Bulk Acoustic Resonator) and a preparation method thereof, and in particular relates to a FBAR based on an MEMS micromachining technology. An epitaxial mono-crystal silicon process is mature; a formed silicon microstructure is good in mechanical property; particularly, the sealing property of a cavity structure formed by using epitaxial mono-crystal silicon is very excellent; therefore, the resonant frequency of the formed FBAR is mainly determined by the thickness of a film bulk, and influenced by environment temperature; the resonant frequency of the FBAR is reduced with the increase of the temperature; furthermore, the obvious monotony is displayed; the property can be used for data detection, such as temperature and pressure; and, in combination with the MEMS micromachining technology, the FBAR is small in size, low in cost and short in response time. 本发明公开了种FBAR谐振器及其制备方法，具体是种基于MEMS微加工技术的FBAR，由于外延单晶硅工艺成熟，其所形成的硅微结构机械性能良好，尤其利用外延单晶硅所形成的腔体结构密封性能十分优异。由此形成的FBAR谐振频率主要由薄膜体厚度决定