Heterojunction solar cell with bilateral field-assisted effect

• Main Authors: ZHANG HUAHUI, CHEN JIE, ZHANG MENGYAN, YANG CHENG, LI XINYI, ZHANG JIANQIN, ZHENG YI, LU HONGBEI, ZHANG WEI
• Format: Patent
• Language: Chinese; English
• Published: 16.11.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses a heterojunction solar cell with a bilateral field-assisted effect. The solar cell is provided with a broad-band gap material region, a narrow-band gap material region and a window layer region which are arranged in sequence, wherein the broad-band gap material region comprises a broad-band gap base region and an non-doped region which are arranged in sequence; the broad-band gap base region adopts AlGa<1-y>As, wherein y is greater than or equal to 0.24 and less than or equal to 0.3; the thickness of the broad-band gap base region is 10-3,000nm; the narrow-band gap material region adopts AlGa<1-x>As, wherein x is less than or equal to 0.2; the thickness of the narrow-band gap material region is 10-40nm; the widow layer region adopts Al(Ga)InP or AlGa<1-z>As, wherein z is greater than or equal to 0.4; the thickness of the widow layer region is 10-50nm; a second heterojunction is formed by the broad-band gap material region and the narrow-band gap material region; and an i/p- type field-