Method for improving ESD protective capability of SOI NMOS device and SOI NMOS device

• Main Authors: YAN BINGYONG, DU HONGLIANG
• Format: Patent
• Language: Chinese; English
• Published: 16.11.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a method for improving an ESD protective capability of an SOI NMOS device and the SOI NMOS device. The method for improving the ESD protective capability of the SOI NMOS device comprises: carrying out well region ion injection and channel ion injection in a silicon top layer of SOI to form a device area; forming a gate oxide layer at the top of the device area; forming a gate structure containing gate side walls on the gate oxide layer through deposition and etching; arranging a photoresist layer on the exposed silicon top layer surface and device area surface and partially removing the photoresist layer from the device area surface so as to partially expose the device area surface; carrying out partial inclined injection by using the photoresist layer to form a partial ESD ion injection area in the device area; and respectively forming a drain electrode and a source electrode in the device area on two sides of the gate structure. 本发明提供了种提高SOI NMOS器件ESD保护能力的方法以及SOI NMOS器件。本发明的提高SOI NMOS