OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

• Main Authors: WATATANI KENICHI, MIYANAGA MIKI, AWATA HIDEAKI
• Format: Patent
• Language: Chinese; English
• Published: 09.11.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided are: an oxide semiconductor film (14) which is configured of a nanocrystal oxide or an amorphous oxide, and which contains indium, tungsten and zinc such that the tungsten content relative to the total content of indium, tungsten and zinc in the oxide semiconductor film is more than 0.5% by atom but 5% by atom or less, while having an electrical resistivity of 10-1 [omega]cm or more; and a semiconductor device (10) which comprises this oxide semiconductor film. 提供了种由纳米晶氧化物或非晶氧化物构成的氧化物半导体膜(14)，其中，所述氧化物半导体膜包括铟、钨和锌，所述氧化物半导体膜中的钨与所述氧化物半导体膜中的铟、钨和锌总和的含量比率高于0.5原子％且等于或低于5原子％，并且电阻率等于或高于10Ωcm。还提供了种包括所述氧化物半导体膜的半导体器件(10)。