Bi-axial tensile strained Ge channel for CMOS

• Main Authors: RACHMADY WILLY, MUKHERJEE NILOY, CHAU ROBERT S, MAJHI PRASHANT, PILLARISETTY RAVI
• Format: Patent
• Language: Chinese; English
• Published: 26.10.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses an apparatus comprising a complimentary metal oxide semiconductor (CMOS) inverter including an n-channel metal oxide semiconductor field effect transistor (MOSFET); and a p-channel MOSFET, wherein a material of a channel in the n-channel MOSFET and a material of a channel in the p-channel MOSFET is subject to a bi-axial tensile strain. A method including forming an n-channel metal oxide semiconductor field effect transistor (MOSFET); forming a p-channel MOSFET; and connecting the gate electrodes and the drain regions of the n-channel MOSFET and the p-channel MOSFET, wherein a material of the channel in the n-channel MOSFET and a material of the channel in the p-channel MOSFET is subject to a bi-axial tensile strain. 种装置，包括：互补金属氧化物半导体(CMOS)反相器，该反相器包括n沟道金属氧化物半导体场效应晶体管(MOSFET)；以及p沟道MOSFET，其中，n沟道MOSFET中的沟道的材料和p沟道MOSFET中的沟道的材料经受双轴向拉伸应变。种方法，包括：形成n沟道金属氧化物半导体场效应晶体管(MOSFET)；形成p沟道MOSFET；以及连接n沟道MOSFET和p沟道MOSFET的栅极电极，并且连接n沟道MOSFET和p沟道MOSFET的漏极区，其中，n沟道MOSFET中的沟道的材料和p沟道MOSFET中的沟道的材料经受双轴向拉伸应变。