Dual-layer antireflection film plating process capable of resisting PID effect of monocrystal solar cell

• Main Authors: CUI ZHIQIU, DING JIYE, CHEN GANGGANG, AN BAIJUN
• Format: Patent
• Language: Chinese; English
• Published: 12.10.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a dual-layer antireflection film plating process capable of resisting a PID effect of a monocrystal solar cell. The process is characterized by comprising the following steps of (1) enabling an oxide layer to be grown on a silicon wafer after the phosphorosilicate glass is removed by adopting an ultraviolet oxidization process specifically at the technological temperature of 350-400 DEG C with the oxygen flow of 4-10L/min for 20-50s to form a compact oxide layer on the surface of the silicon wafer; (2) inserting the silicon wafer into a graphite boat and putting the graphite boat into a furnace tube; (3) vacuumizing the furnace tube to reduce the pressure in the furnace pipe to be less than 35mtorr; and (4) pumping 6,000-6,200sccm of ammonia gas to the furnace tube, controlling the pressure in the furnace tube to be 1,600-1,700mtorr, controlling the temperature to be 425 DEG C, and opening a radio frequency power supply. Trials prove that the PID effect of the solar cell can be well s