Band-gag-modified Ge material and preparation method thereof

• Main Authors: REN YUAN, SONG JIANJUN, XUAN RONGXI, ZHANG HEMING, HU HUIYONG, JIANG DAOFU
• Format: Patent
• Language: Chinese; English
• Published: 12.10.2016
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a band-gag-modified Ge material and a preparation method thereof. The preparation method comprises the following steps: selecting an Si substrate; growing a Ge film layer on the Si substrate at a first temperature; growing a Ge layer on the Ge film layer at a second temperature; growing a GeSn layer on the Ge layer to form a Ge material to be modified; and applying mechanical stress on the Ge material to be modified by using a stress applying device to finally form the band-gag-modified Ge material. The coaction of alloying and stress is utilized to convert the Ge band gap type, thereby solving the problem of high technical difficulty caused by low Ge band gap type conversion solid solubility and high stress intensity due to the single dependence on the alloying or stress. The band-gag-modified Ge material is applicable to electronic devices and photonic devices, and can provide another technical approach for uniwafer photoelectric integration. 本发明涉及种带隙改性Ge材料及其制备方法。该制备方法包括：选取Si衬底；在第温度