Organic and inorganic hybrid bismuth and iodine anionic cluster-based semiconductor material

• Main Authors: ZHU QIUMENG, SHEN HANGYAN, SONG LI, CHEN HAICHAO, SHU KANGYING, CHAI WENXIANG, GUO BING, QIN LAISHUN, WU XIAOYUN
• Format: Patent
• Language: Chinese; English
• Published: 12.10.2016
• Subjects: CHEMISTRY; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; HETEROCYCLIC COMPOUNDS; INORGANIC CHEMISTRY; METALLURGY; ORGANIC CHEMISTRY

The invention discloses an organic and inorganic hybrid bismuth and iodine anionic cluster-based semiconductor material and a preparation method thereof. The molecular structural formula of the organic and inorganic hybrid semiconductor material is (MV)2(Bi4I16), MV in the formula is organic cationic methyl viologen with two unit positive charges, and the (Bi4I16) anion in the material is a four-nuclear cluster structural anion composed of trivalent bismuth ions and iodide ions. Through a coordination reaction between the bismuth iodide and a solution of methyl viologen iodide, the organic and inorganic hybrid semiconductor material which is good in semiconductor performance and thermal stability is conveniently prepared with low price, the organic and inorganic hybrid semiconductor material is moderate in energy gap and good in thermal stability and can be applied to the technical field of optoelectronic materials. 本发明公开了种有机无机杂化铋碘阴离子簇基半导体材料及其制备方法。所述有机无机杂化半导体材料，其分子结构式为(MV)(BiI)，式中MV为带两个单位正电荷的有机阳离子甲基紫精，该材料中的(B