Upper dome with injection assembly

• Main Authors: YE ZHIYUAN, CARLSON DAVID K, LO KIN PONG, BRILLHART PAUL, CHANG ANZHONG, TONG EDRIC, MACK JAMES FRANCIS, SANCHEZ ERROL ANTONIO C, SHAH KARTIK, KUPPURAO SATHEESH, RANISH JOSEPH M
• Format: Patent
• Language: Chinese; English
• Published: 28.09.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome. 在此所提供的实施方式般涉及用于将气体输送至半导体处理腔室的设备。外延半导体处理腔室的上部石英圆顶具有被形成于其内的多个孔洞且前驱物气体通过上部圆顶的孔洞而被提供进入处理腔室的处理空间。气体输送管件从圆顶内的孔洞延伸至凸缘板，在凸缘板中管件耦接于气体输送线。气体输送设备致使气体能够通过石英上部圆顶而被输送至基板上方的处理空间。