Semiconductor laser device design method, Raman amplifier design method, semiconductor laser device manufacturing method, semiconductor laser device, Raman amplifier and optical communication system

• Main Authors: YOSHIDA JUNJI, YOKOUCHI NORIYUKI, IRINO SATOSHI, SAWAMURA TAKESHI, HASEGAWA HIDEAKI
• Format: Patent
• Language: Chinese; English
• Published: 31.08.2016
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DEVICES USING STIMULATED EMISSION; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

A method for designing a semiconductor laser device comprises selecting a semiconductor laser device capable of fast switching between FBG and FP modes and using the semiconductor laser device in a manner that the device oscillates in coherent collapse mode. Where, the semiconductor laser device has an LFF cycle set equal to or below 20 ns by controlling a distance from an output-side reflection means to a second reflection means, and an effective return light quantity (kappa) to a semiconductor laser element defined as the following expression: [kappa]= (1 /[tau])*(1 - R1)*(R2 / R1)1/2 Wherein, [tau] represents the circulation time of light in the semiconductor laser element; R1 represents the reflectance of the output-side reflection means; and R2 represents the reflectance of the second reflection means. 在半导体激光装置的设计方法中，通过控制从输出侧反射单元到第二反射单元的距离、和用包含半导体激光元件中的光的环绕时间τ、输出侧反射单元的反射率R以及第二反射单元的反射率R的κ＝(1/τ)×(1-R)×(R/R)的式定义的向半导体激光元件的有效的返回光量κ，来使LFF周期成为20ns以下，选择该LFF周期成为20ns以下的半导体激光装置，作为出现FBG模式和FP模式的高速切换的半导体激光装，作为在相干崩溃模式下