Reverse conducting-insulated gate bipolar transistor structure and corresponding manufacturing method thereof

• Main Authors: Liu Peisi, Zhou Xianda, Shan Jian'an
• Format: Patent
• Language: Chinese; English
• Published: 24.08.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a reverse conducting-insulated gate bipolar transistor (RC-IGBT) structure and a corresponding manufacturing method thereof. The invention relates to a structure of a power semiconductor device and a manufacturing process, provides a high-performance RC-IGBT structure manufactured in the absence of a thin wafer process and provides an RC-IGBT structure. The structure comprises emitting electrodes located on a front surface, a plurality of cells under the emitting electrode, n<-> drift regions under the cells, collecting electrodes on a back surface, a plurality of grooves which are formed in the back surface and are fully filled with the collecting electrodes, mechanical supporting semiconductor regions between the grooves, p<+> current collecting regions which are arranged at the tops of the grooves and are connected to the collecting electrodes, n buffering regions which are arranged at the tops of the p<+> current collecting regions and are located under the n buffering regions, and