Etchant Composition And Method Of Forming A Transparant Electrode

The invention discloses an etchant composition for etching an indium oxide layer and a method for forming a transparant electrode. The etchant composition comprises 5-10wt% of nitric acid, 0.5-5wt% of sulfonyl chloride compounds, 0.1-5wt% of cyclammonium compounds, and balance being water. A thick i...

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Bibliographic Details
Main Authors KIM, Bo-Hyeong, YU, In-Ho, KWON, Min-Jeong
Format Patent
LanguageChinese
English
Published 24.08.2016
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CABLES
CHEMISTRY
CONDUCTORS
DYES
ELECTRICITY
INSULATORS
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
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Summary:The invention discloses an etchant composition for etching an indium oxide layer and a method for forming a transparant electrode. The etchant composition comprises 5-10wt% of nitric acid, 0.5-5wt% of sulfonyl chloride compounds, 0.1-5wt% of cyclammonium compounds, and balance being water. A thick indium oxide layer is etched for forming a transparent electrode layer with a low resistance, and the etchant composition can sufficiently improve etching rate without residue, and can increase the process efficiency. 公开了用于蚀刻氧化铟层的蚀刻剂组合物以及使用其形成透明电极的方法，所述蚀刻剂组合物包括5-10wt％的硝酸，0.5-5wt％的磺酰氯类化合物，0.1-5wt％的环胺化合物，和剩余部分的水。当蚀刻厚的氧化铟层(或更多)以形成具有低电阻的透明电极层时，蚀刻剂组合物能够充分增大蚀刻速率而不产生残渣，因此提高加工效率。
Bibliography:Application Number: CN201610079608