Light emitting diode and manufacturing method thereof

• Main Authors: Wu Junyi, Lu Yian, Meng Cheng, Zhi Ting, Wang Duxiang
• Format: Patent
• Language: Chinese; English
• Published: 17.08.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a light emitting diode and a manufacturing method thereof. The light emitting diode comprises a conductive substrate, a high-reflection mirror surface layer, a light emitting epitaxy overlapped layer and an electrode, wherein the light emitting epitaxy overlapped layer comprises a first semiconductor layer, an active layer and a second semiconductor layer; the high-reflection mirror surface layer consists of a light transmission layer and a metal reflection layer; spot-shaped scattering points are arranged in local areas inside the light transmission layer; the refractive index of the light transmission layer is smaller than that of the spot-shaped scattering points. Due to adoption of the spot-shaped scattering reflecting mirror structure, an ultra-high reflectivity mirror surface system can be formed, light in a vertical direction can be scattered to other directions, and repeated light reflection and absorption can be avoided. 本发明公开了种发光二极管及其制作方法，其中所述发光二极管依次包括：导电基板、高反射镜面层、发光外延叠层和电极，所