Under-light conversion layer for silicon solar cell and manufacturing method of under-light conversion layer
The invention relates to an under-light conversion layer for a silicon solar cell and a manufacturing method of the under-light conversion layer. Firstly, a rare earth organic-inorganic hybrid near-infrared quantum cutting nano material is prepared and is evenly dispersed in a transparent polymer, a...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
17.08.2016
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to an under-light conversion layer for a silicon solar cell and a manufacturing method of the under-light conversion layer. Firstly, a rare earth organic-inorganic hybrid near-infrared quantum cutting nano material is prepared and is evenly dispersed in a transparent polymer, and the under-light conversion layer for a silicon solar cell is prepared by means of a spin-coating method or a dip-coating method. The rare earth organic-inorganic hybrid near-infrared quantum cutting nano material in the conversion layer has a large light absorption molar coefficient and a wide absorption band, comprises an inorganic matrix which protects cations at the luminescence center from luminescence quenching of a non-radiative passivating source, and is compatible with high-molecular polymers. The rare earth organic-inorganic hybrid near-infrared quantum cutting nano material can effectively absorb short wavelength photons with poor cell spectrum response in sun light and emit near-infrared photons with |
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Bibliography: | Application Number: CN2015126440 |