Method for reducing stress of ultra-thin tetrahedron amorphous carbon membrane

• Main Authors: Xu Shipeng, Xue Yangquan, Chen Weiqian, Lin Li, Li Yuhong
• Format: Patent
• Language: Chinese; English
• Published: 17.08.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a method for reducing the stress of an ultra-thin tetrahedron amorphous carbon membrane. The method comprises the following steps of (1) processing a silicon substrate by alcohol with concentration of 95% to obtain a processed silicon wafer substrate, pasting the silicon wafer substrate on a base, starting a thin film fabrication device, and vacuuimzing; (2) etching and washing the silicon wafer substrate by a magnetic filter cathode vacuum arc device to obtain an ultra-thin ta-C carbon membrane; and (3) depositing the ultra-thin ta-C carbon membrane for 35-40 minutes to obtain the ultra-thin tetrahedron amorphous carbon membrane, and cooling the temperature of the ultra-thin tetrahedron amorphous carbon membrane to be 20-30 DEG C. The ultra-thin tetrahedron amorphous carbon membrane has the advantages of low stress, high rigidity and no damage to mechanical property of a thin film, and is simple and convenient to prepare, sp content is not reduced, and the service lifetime of the thi