Etching method

• Main Authors: Koji TAKEYA, Junichiro MATSUNAGA, Masasi MATUMOTO, Nobuhiro TAKAHASHI, Ayano HAGIWARA
• Format: Patent
• Language: Chinese; English
• Published: 10.08.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An etching method includes: disposing a target substrate including a silicon and a silicon-germanium within a chamber; and performing both of selectively etching the silicon-germanium with respect to the silicon and selectively etching the silicon with respect to the silicon-germanium by varying ratios of F2 gas and NH3 gas in an etching gas that has a gas system including the F2 gas and the NH3 gas. 提供在SiGe和Si共存的被处理基板中，能够使用相同的气体体系在同装置内进行相对于Si选择性蚀刻SiGe、以及相对于SiGe选择性蚀刻Si的蚀刻方法。通过将具有硅和硅锗的被处理基板配置于腔室内，将蚀刻气体的气体体系设为F气体和NH气体，并改变F气体与NH气体的比率，从而进行相对于硅选择性蚀刻硅锗、以及相对于硅锗选择性蚀刻硅。