Etching method
An etching method includes: disposing a target substrate including a silicon and a silicon-germanium within a chamber; and performing both of selectively etching the silicon-germanium with respect to the silicon and selectively etching the silicon with respect to the silicon-germanium by varying rat...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
10.08.2016
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Subjects | |
Online Access | Get full text |
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Summary: | An etching method includes: disposing a target substrate including a silicon and a silicon-germanium within a chamber; and performing both of selectively etching the silicon-germanium with respect to the silicon and selectively etching the silicon with respect to the silicon-germanium by varying ratios of F2 gas and NH3 gas in an etching gas that has a gas system including the F2 gas and the NH3 gas.
提供在SiGe和Si共存的被处理基板中,能够使用相同的气体体系在同装置内进行相对于Si选择性蚀刻SiGe、以及相对于SiGe选择性蚀刻Si的蚀刻方法。通过将具有硅和硅锗的被处理基板配置于腔室内,将蚀刻气体的气体体系设为F气体和NH气体,并改变F气体与NH气体的比率,从而进行相对于硅选择性蚀刻硅锗、以及相对于硅锗选择性蚀刻硅。 |
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Bibliography: | Application Number: CN201610077423 |