种多结太阳电池渐变缓冲层的腐蚀方法

• Format: Patent
• Language: Chinese
• Published: 17.04.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

本发明涉及种多结太阳电池渐变缓冲层的腐蚀方法。本发明属于半导体材料技术领域。种多结太阳电池渐变缓冲层的腐蚀方法，其特点是：多结太阳电池渐变缓冲层的腐蚀过程为：在砷化镓衬底上生长0.8-1.2μm的GaAs缓冲层，180-220nm的GaInP阻挡层，1400-1800nm的AlGaInAs渐变缓冲层；将外延片用光刻胶进行保护，同时露出需要腐蚀测厚的部分；用化学腐蚀液对裸露部分进行腐蚀，化学腐蚀液采用柠檬酸、HO和磷酸溶液，腐蚀液温度为20～25℃；腐蚀完毕后，用丙酮溶液除去光刻胶，用无水乙醇及去离子水将外延片清洗干净后，即可测量AlGaInAs渐变缓冲层厚度。本发明具有方法简单，操作方便，安全稳定，重复性好，不腐蚀GaInP阻挡层，可以实现准确测量渐变缓冲层的厚度等优点。 The invention relates to a corrosion method for a gradual change buffer layer of a multi-junction solar battery and belongs to the technical field of semiconductor material. The method is characterized in that the corrosion process of the gradual change buffer layer of the multi-junction solar battery includes growing a 0.8 to 1.2 [mu]m GaAs buffer layer, a 180 to 220 nm GaInP blocking layer and a 1400 to 1800 nm AlGaInAs gradual change buffer layer on a gallium arsenide substrate; protecting an epitaxial slice with photoresist and exposing a part to be corroded and measured; using a chemical corrosion liquid for corroding the exposed part, wherein the corrosion liquid is a