Corrosion method for gradual change buffer layer of multi-junction solar battery

• Main Authors: WANG LIGONG, WANG SHUAI, LI HUI, LIU RUBIN, SUN QIANG, XIAO ZHIBIN, GAO PENG, ZHANG QIMING
• Format: Patent
• Language: Chinese; English
• Published: 13.07.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention relates to a corrosion method for a gradual change buffer layer of a multi-junction solar battery and belongs to the technical field of semiconductor material. The method is characterized in that the corrosion process of the gradual change buffer layer of the multi-junction solar battery includes growing a 0.8 to 1.2 [mu]m GaAs buffer layer, a 180 to 220 nm GaInP blocking layer and a 1400 to 1800 nm AlGaInAs gradual change buffer layer on a gallium arsenide substrate; protecting an epitaxial slice with photoresist and exposing a part to be corroded and measured; using a chemical corrosion liquid for corroding the exposed part, wherein the corrosion liquid is a solution composed of citric acid, H2O2 and phosphoric acid and the temperature of the corrosion liquid is 20 to 25 DEG C; removing the photoresist with acetone solution after the corrosion is completed and cleaning the epitaxial slice with absolute ethyl alcohol and deionized water. Then, the thickness of the AlGaInAs gradual change buffer