种硅异质结太阳能电池及其制作方法

• Format: Patent
• Language: Chinese
• Published: 29.05.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

本发明公开了种硅异质结太阳能电池及其制作方法，该硅异质结太阳能电池包括：晶硅衬底，在晶硅衬底的入光侧依次设置的第非晶硅层、前电极层和前栅线，焊接或粘贴在前栅线上的第互联条，在晶硅衬底的背光侧依次设置的第二非晶硅层、第透明导电氧化物薄膜和银薄膜，以及焊接或粘贴在银薄膜背离晶硅衬底侧的第二互联条；与现有的硅异质结太阳能电池在背电极层上设置背栅线的结构相比，省去利用银浆材料制作的背栅线，在银薄膜上直接焊接或粘贴第二互联条，这样，不仅可以简化硅异质结太阳能电池的制作工艺，还可以降低硅异质结太阳能电池的制作成本。 The invention discloses a silicon heterojunction solar battery and a manufacture method thereof. The silicon heterojunction solar battery includes a crystalized silicon substrate; a first non-crystalized silicon layer, a front electrode layer and a front grid line arranged on the light incoming side of the crystalized silicon substrate successively; a first interconnection strip welded or bonded to the front grid line; a second non-crystalized silicon layer, a first transparent conducting oxide film and a silver film arranged on the backlight side of the crystalized silicon substrate successively; and a second interconnection strip welded or bonded to one side, away from the crystalized silicon substrate, of the silver film. Compared with a prior structure in