Memory unit of perpendicular spin transfer torque magnetic random access memory

• Main Authors: XIA WENBIN, XIAO RONGFU, GUO YIMIN, CHEN JUN
• Format: Patent
• Language: Chinese; English
• Published: 15.06.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

The invention provides a memory unit of a perpendicular spin transfer torque magnetic random access memory, wherein the memory unit includes a stacked structure and a spin valve control layer. The stacked structure comprises a magnetic reference layer, a magnetic memory layer, a tunnel barrier layer, an interlayer, and a spin valve layer. The magnetization direction of the magnetic reference layer is constant with magnetic anisotropy being perpendicular to the surface of the layer. The magnetization directions of the magnetic memory layer and the spin valve layer are changeable with the magnetic anisotropy being perpendicular to the surface of the layer. The tunnel barrier layer is arranged between and is adjacent to the magnetic reference layer and the magnetic memory layer. The magnetic anisotropy of the spin valve layer is less than that of the magnetic memory layer, wherein the spin valve layer comprises at least to sub-layers. The interlayer is adjacent to the magnetic memory layer and the spin valve lay