Trench isolation structure and formation method thereof

• Main Authors: GE HONGTAO, BAO XIAOYAN
• Format: Patent
• Language: Chinese; English
• Published: 08.06.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a trench isolation structure and a formation method thereof. The formation method comprises that a substrate is provided; trenches are formed in the substrate; first isolation layers are formed at the bottom surfaces of the trenches respectively; semiconductor layers are formed in the sidewall surfaces of the trenches at positions higher than the first isolation layers respectively; and second isolation layers filling the trenches are formed at the surfaces of the semiconductor layers and the first isolation layers respectively. The formed trench isolation structure improves both the quality and the isolation effect. 种沟槽隔离结构及其形成方法，形成方法包括：提供衬底；在所述衬底内形成沟槽；在所述沟槽底部表面形成第隔离层；在高于所述第隔离层的沟槽侧壁表面形成半导体层；在所述半导体层和第隔离层表面形成填充满所述沟槽的第二隔离层。所形成的沟槽隔离结构的质量提高、隔离效果改善。