Semiconductor device and manufacturing method for the same

• Main Author: KADOGUCHI, TAKUYA
• Format: Patent
• Language: Chinese; English
• Published: 11.05.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a semiconductor device and a manufacturing method for the same. The semiconductor device (2) includes first and second semiconductor elements (3, 5) and first and second conductive members (10, 29). A first electrode (3a) on the first semiconductor element is bonded to a first stack part (12) of the first conductive member by a first bonding layer (8a). A second electrode (5b) on the second semiconductor element is bonded to a second stack part (25) of the second conductive member by a second bonding layer (8f). A first joint part (13) of the first conductive member is bonded to a second joint part (26) of the second conductive member by an intermediate bonding layer (8g). A first surface of the first joint part facing the second joint part, a side surface of the first joint part continuous from the first surface, a second surface of the second joint part facing the first joint part, and a side surface of the second joint part continuous from the second surface are covered by nickel la