Semiconductor device and manufacturing method thereof, and electronic device

• Main Authors: HONG SUN, LI LIU, CHICHUNG TAI, GUANGLI YANG, XIANYONG PU, GANGNING WANG
• Format: Patent
• Language: Chinese; English
• Published: 11.05.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a semiconductor device and a manufacturing method thereof, and an electronic device and relates to the semiconductor technology field. The method comprises the following steps of S101, providing a semiconductor substrate including an embedded ion implantation layer and forming at least two first grooves through etching; S102, forming a first dielectric layer covering a side wall of each first groove; S103, forming a doped polysilicon layer covering a side wall of the first dielectric layer and a bottom wall of each first groove; S104, etching to remove a part of the doped polysilicon layer covering the bottom wall of each first groove and continuously etching to form a second groove penetrating the embedded ion implantation layer; S105, forming a second dielectric layer in the second groove to form an isolation frame including the two adjacent second dielectric layers and the embedded ion implantation layer, and forming an electronic component in the isolation frame. Because the device