Method for making field effect transistor

• Main Authors: KIYOTA JUNYA, KOBAYASHI MOTOSHI, AKAMATSU YASUHIKO, YUKAWA TOMIYUKI, TAKEI MASAKI, ISHIBASHI SATORU, ARAI MAKOTO, KURATA TAKAOMI
• Format: Patent
• Language: Chinese; English
• Published: 11.05.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention provides a method for making field effect transistor. A process for producing a field effect transistor is provided which can attain an improvement in transistor characteristics without the need of high-temperature annealing. An In-Ga-Zn-O thin film constituting an active layer is formed by sputtering at a film deposition temperature of 100 DEG C or higher. Thereafter, the thin film is annealed in the air at 300 DEG C. The annealing is conducted in order to improve the transistor characteristics of the active layer which has just been deposited. The In-Ga-Zn-O thin film deposited by sputtering while heating the substrate is reduced in internal strain and defects as compared with an In-Ga-Zn-O thin film deposited without heating. Consequently, the In-Ga-Zn-O thin film formed as an active layer with heating is capable of being more effectively annealed than an active layer of the same material deposited without heating. Thus, an active layer having excellent transistor characteristics can be forme