Memory structure and manufacturing method thereof

• Main Authors: SHI NENGTAI, LI ZONGHAN, HU YAOWEN, LYU CHENG'EN
• Format: Patent
• Language: Chinese; English
• Published: 27.04.2016
• Subjects: ELECTRICITY

The invention discloses a memory structure and a manufacturing structure thereof. The memory structure comprises a substrate, a recessed type grid electrode, a first diffusion zone and a second diffusion zone. The substrate is provided with uncontinuous well regions. The recessed type grid electrode is arranged in one groove of the substrate. The first diffusion zone and the second diffusion zone are respectively arranged on two sides of the recessed type grid electrode on the substrate. The conduction types of the first diffusion zone and of the second diffusion zone are different from those of the uncontinuous well regions. Each of the uncontinuous well regions comprises at least one first part and at least two second parts, wherein the first parts are not in contact with the second parts. The first parts are arranged under the recessed type grid electrode. The second parts are arranged under the first and second diffusion zones. The doping density of the first parts is the same as that of the second parts.