Manufacturing process of cross-torque array-type magnetic random memory
The invention provides a manufacturing process of a cross-torque array-type magnetic random memory. The process comprises the steps of: forming a bottom electrode; forming a magnetic memory unit array on the top part of the bottom electrode, wherein a plurality of layers of films are prepared to for...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
06.04.2016
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a manufacturing process of a cross-torque array-type magnetic random memory. The process comprises the steps of: forming a bottom electrode; forming a magnetic memory unit array on the top part of the bottom electrode, wherein a plurality of layers of films are prepared to form a PN junction and a magnetic tunnel junction which are connected in series; and forming a top electrode on the top part of the magnetic memory unit array. According to the invention, a semiconductor diode is used to replace a triode as a current flow direction selector in a magnetic memory unit, and a complex power supply network is replaced by a simple cross-type power supply mode; in addition, the production process of the MRAM is substantially simplified, the cost is lowered, and the integration of a storage chip especially of a pSTT-MAR product is greatly improved. |
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Bibliography: | Application Number: CN201510726594 |