Manufacturing process of cross-torque array-type magnetic random memory

The invention provides a manufacturing process of a cross-torque array-type magnetic random memory. The process comprises the steps of: forming a bottom electrode; forming a magnetic memory unit array on the top part of the bottom electrode, wherein a plurality of layers of films are prepared to for...

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Bibliographic Details
Main Authors XIAO RONGFU, GUO YIMIN, CHEN JUN
Format Patent
LanguageChinese
English
Published 06.04.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a manufacturing process of a cross-torque array-type magnetic random memory. The process comprises the steps of: forming a bottom electrode; forming a magnetic memory unit array on the top part of the bottom electrode, wherein a plurality of layers of films are prepared to form a PN junction and a magnetic tunnel junction which are connected in series; and forming a top electrode on the top part of the magnetic memory unit array. According to the invention, a semiconductor diode is used to replace a triode as a current flow direction selector in a magnetic memory unit, and a complex power supply network is replaced by a simple cross-type power supply mode; in addition, the production process of the MRAM is substantially simplified, the cost is lowered, and the integration of a storage chip especially of a pSTT-MAR product is greatly improved.
Bibliography:Application Number: CN201510726594