Method for manufacturing trench-type power device

• Main Author: SHEN SIJIE
• Format: Patent
• Language: Chinese; English
• Published: 06.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The method provides a method for manufacturing a trench-type power device. The well region injection is executed in a substrate, the pattern of a hard mask is formed in a well region, and side walls are formed at two sides of the hard mask pattern. The etching is executed by using the hard mask pattern as a mask, and a device region groove and an end region groove are formed in the substrate. A polysilicon material is deposited, the device region groove is filled with the polysilicon material, and a protection ring is formed in the side wall of the end region groove. A side wall is removed, the ion injection is executed by using the hard mask pattern as the mask, and heavy doped regions are formed at the two sides of the device region groove and one side of the end region groove. An oxide layer is deposited and is etched such that an opening which is opened by the device region oxide is formed in the first groove with the need of forming a contact hole at the surface in the device region groove. The hard mask