MoS2 nanosheet dual-gate field effect transistor/supercapacitor composite device and manufacturing method therefor

• Main Authors: SHUANG YI, MAI LIQIANG, YAN MENGYU
• Format: Patent
• Language: Chinese; English
• Published: 06.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; TESTING

The invention relates to a MoS2 nanosheet dual-gate field effect transistor/supercapacitor composite device, a manufacturing method for the device and a capacity expansion mechanism for in-situ analysis on the device. The method comprises the following steps of: 1) dispersing a MoS2 nanosheet positive electrode on a silicon substrate with an oxide layer SiO2, and taking the oxide layer SiO2 as a back gate dielectric layer and the silicon substrate as a back gate electrode; 2) making metal source and drain on the MoS2 nanosheet positive electrode, and making counter electrode metal as a capacitor negative electrode and an ionic liquid top gate electrode; 3) making protective layers on the metal source and drain to obtain a prepared substrate; and 4) applying ionic liquid electrolysis drops to the surface of the substrate to complete the assembly of the MoS2 nanosheet dual-gate field effect transistor/supercapacitor composite device. According to the device, the method and the capacity expansion mechanism, the