Si-substrate LED epitaxial wafer and preparation method therefor
The invention discloses an Si-substrate LED epitaxial wafer and a preparation method therefor, and relates to the technical fields of a device with a special crystal structure and a preparation method for the device. The epitaxial wafer comprises an Si substrate and an epitaxial layer positioned on...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
16.03.2016
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Subjects | |
Online Access | Get full text |
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