Si-substrate LED epitaxial wafer and preparation method therefor

• Main Authors: ZHOU XIAOLONG, WANG LING, LIU BO, PAN PENG, YUAN FENGPO, WANG BO, BAI XINJIAO, FANG YULONG, WANG JINGHUI
• Format: Patent
• Language: Chinese; English
• Published: 16.03.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses an Si-substrate LED epitaxial wafer and a preparation method therefor, and relates to the technical fields of a device with a special crystal structure and a preparation method for the device. The epitaxial wafer comprises an Si substrate and an epitaxial layer positioned on the surface of the Si substrate; and the epitaxial layer comprises an AlN/AlGaN buffer layer, an non-intentional-doped U-shaped GaN layer, an Si-doped N type GaN layer, an InGaN/Gan multiple-quantum well luminous layer, an electronic battier layer and an Mg-doped P type GaN layer from the bottom up in sequence. According to the epitaxial wafer, the internal quantum efficiency is improved, the piezoelectric polarization electric field is reduced and the wave function alternation of electrons and holes is increased, so that the radiation recombination probability is improved, and the internal quantum efficiency is further improved.