Semiconductor structures with coplanar recessed gate layers and fabrication methods

Semiconductor structures with coplanar recessed gate layers and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple confo...

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Bibliographic Details
Main Authors HOONG SHING WONG, GANESH UPADHYAYA, TAEJOON HAN, GOWRI KAMARTHY, CHANG HO MAENG, KRISTINA TREVINO, ISABELLE ORAIN, GABRIEL PADRON WELLS, YUAN-HUNG LIU, XING ZHANG
Format Patent
LanguageChinese
English
Published 02.03.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Semiconductor structures with coplanar recessed gate layers and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple conformal gate layers; recessing a portion of the multiple conformal gate layers below an upper surface of the gate structure, where upper surfaces of recessed, multiple conformal gate layers are coplanar; and removing a portion of the gate material to facilitate an upper surface of a remaining portion of the gate material to be coplanar with an upper surface of the recessed, multiple conformal gate layers.
Bibliography:Application Number: CN201510509364