MEMS制造中的多材料辅助金属化方案

本申请提供了制造MEMS的处理,利用了被集成到最终MEMS结构的主金属以及两种或更多种牺牲性辅助金属,辅助金属在机加工期间给主金属构件提供结构支撑。第辅助金属被薄薄地镀在主金属周围和衬底的整个表面上方而不使用光刻。第二辅助金属然后被厚厚地镀在所沉积的第辅助金属上方而不使用光刻。另外,还公开了使第辅助金属在主金属特征之间的沉积速率增大的技术,其防止空洞化并从而增强机加工期间主金属的结构支撑。 Processes are provided herein for the fabrication of MEMS utilizing both a primary metal that is integr...

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Format Patent
LanguageChinese
Published 18.05.2018
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Summary:本申请提供了制造MEMS的处理,利用了被集成到最终MEMS结构的主金属以及两种或更多种牺牲性辅助金属,辅助金属在机加工期间给主金属构件提供结构支撑。第辅助金属被薄薄地镀在主金属周围和衬底的整个表面上方而不使用光刻。第二辅助金属然后被厚厚地镀在所沉积的第辅助金属上方而不使用光刻。另外,还公开了使第辅助金属在主金属特征之间的沉积速率增大的技术,其防止空洞化并从而增强机加工期间主金属的结构支撑。 Processes are provided herein for the fabrication of MEMS utilizing both a primary metal that is integrated into the final MEMS structure and two or more sacrificial secondary metals that provide structural support for the primary metal component during machining. A first secondary metal is thinly plated around the primary metal and over the entire surface of the substrate without using photolithography. A second secondary metal, is then thickly plated over the deposited first secondary metal without using photolithography. Additionally, techniques are disclosed to increase the deposition rate of the first secondary metal between primary metal features in order to prevent voiding and thus enhance structural support of the primary metal during machining.
Bibliography:Application Number: CN2010859561