Molecular beam epitaxy growing method of high-speed vertical-cavity surface-emitting laser

• Main Authors: TANG BAO, LI MIFENG
• Format: Patent
• Language: English
• Published: 17.02.2016
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

The invention provides a molecular beam epitaxy (MBE) growing method of a high-speed vertical-cavity surface-emitting laser. The method comprises the steps that deoxidation pretreatment is conducted on a GaAs substrate, and epitaxial growth of a GaAs buffer layer, a lower DBR, an active region, an oxidation confinement layer and an upper DBR is sequentially achieved; in the growth process, the active region is clamped between the upper DBR and the lower DBR, and a delta-doping method is adopted by the potential barrier middle position of the active region, wherein a doping source adopts carbon (C), and growth is stopped for a period of time under the protection of As after delta-doping is completed. By means of the method, the technical problems of reducing a threshold, increasing differential gain and reducing nonlinear gain compression are solved, and the good effects of reducing optical losses, decreasing line width and increasing output power and intrinsic bandwidth are achieved.