Semiconductor substrate and manufacturing method thereof

• Main Author: HSIAO, WEI-MIN
• Format: Patent
• Language: English
• Published: 10.02.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a semiconductor substrate, which comprises an organic material layer, a first redistribution layer, a second redistribution layer, a plurality of first engagement features and a plurality of second engagement features, wherein the organic material layer comprises two surfaces and covers a plurality of metal columns; the first redistribution layer is located at one surface of the organic material layer and is electrically connected to the metal columns; the second redistribution layer is located at the other surface of the organic material layer and is electrically connected to the metal columns; the plurality of first engagement features are mutually spaced by a first distance; the plurality of second engagement features are mutually spaced by a second distance, and the first distance is greater than the second distance.