Semiconductor substrate and manufacturing method thereof

The invention relates to a semiconductor substrate, which comprises an organic material layer, a first redistribution layer, a second redistribution layer, a plurality of first engagement features and a plurality of second engagement features, wherein the organic material layer comprises two surface...

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Bibliographic Details
Main Author HSIAO, WEI-MIN
Format Patent
LanguageEnglish
Published 10.02.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a semiconductor substrate, which comprises an organic material layer, a first redistribution layer, a second redistribution layer, a plurality of first engagement features and a plurality of second engagement features, wherein the organic material layer comprises two surfaces and covers a plurality of metal columns; the first redistribution layer is located at one surface of the organic material layer and is electrically connected to the metal columns; the second redistribution layer is located at the other surface of the organic material layer and is electrically connected to the metal columns; the plurality of first engagement features are mutually spaced by a first distance; the plurality of second engagement features are mutually spaced by a second distance, and the first distance is greater than the second distance.
Bibliography:Application Number: CN20141341520