Method of preparing photoresist pattern

The present invention relates to a method for forming a photoresist pattern, and more specifically relates to a method for forming a photoresist pattern, which includes a layer formation process, an exposure process, and a development process, and does not need to perform a thermal treatment process...

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Bibliographic Details
Main Authors CHO, YONG HWAN, CHUN, JI MIN, PARK, HAN WOO
Format Patent
LanguageEnglish
Published 10.02.2016
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:The present invention relates to a method for forming a photoresist pattern, and more specifically relates to a method for forming a photoresist pattern, which includes a layer formation process, an exposure process, and a development process, and does not need to perform a thermal treatment process after development by performing an additional exposure process after the development process.
Bibliography:Application Number: CN201510353799