多结太阳能电池外延结构、多结太阳能电池及其制备方法

• Format: Patent
• Language: Chinese
• Published: 13.04.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

本发明公开种多结太阳能电池外延结构，包括：GaAs衬底；在GaAs衬底上的GalnP第子电池；在GalnP第子电池上的GaAs第二子电池；和在GaAs第二子电池上的lnGaAs第三子电池，其中，GaAs衬底采用(001)面偏＜100＞方向5～20度的偏角。在具有该偏角的衬底上生长的多结电池材料，可以在获得大禁带宽度(Al)GalnP材料的同时，减小lnGaAs电池应变缓冲层的缺陷密度，从而提高倒装多结太阳能电池的整体性能。另外公开了相应的多结太阳能电池及其制备方法。 The invention discloses a multi-junction solar epitaxial structure, including: a GaAs substrate; a GaInP first sub-cell on the GaAs substrate; a GaAs second sub-cell on the GaInP first sub-cell; and a InGaAs third sub-cell on the GaAs second sub-cell, wherein a (001) surface of the GaAs substrate adopts a deflection angle of 5 to 20 degrees towards a direction. A multi-junction cell material that grows on the substrate having the deflection angle can reduce defect density of a InGaAs cell strain buffer layer while obtaining a large-energy-gap (Al)GaInP material, thereby improving overall performance of an inverted multi-junction solar cell. In addition, a corresponding multi-junction solar cell and a preparation method thereof are disclosed.