Flash memory device test structure and manufacturing method thereof

The invention provides a flash memory device test structure and a manufacturing method thereof. After a first metal interconnecting layer is manufactured, bridging electric leakage tests between a word line and a control grid, between the word line and a bit line, and between bit lines can be direct...

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Bibliographic Details
Main Author LIU XIANZHOU
Format Patent
LanguageEnglish
Published 16.12.2015
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The invention provides a flash memory device test structure and a manufacturing method thereof. After a first metal interconnecting layer is manufactured, bridging electric leakage tests between a word line and a control grid, between the word line and a bit line, and between bit lines can be directly carried out, so that the waiting time for manufacturing a second metal interconnecting layer and a third metal interconnecting layer in the prior art is shortened; and meanwhile, due to a mode for connecting the first metal interconnecting layer with an active area line, the word line and a control grid line, interconnecting structures of the second metal interconnecting layer and the third metal interconnecting layer are simplified, so that the manufacturing process can be simplified, the time spent for failure analysis can be shortened, and the process cost can be reduced.
Bibliography:Application Number: CN20151490477