Method for removing Zn impurity element in vacuum film plating device
The invention discloses a method for removing a Zn impurity element in a vacuum film plating device. In a process of deposition of a non-microcrystalline silicon thin-film battery, an oxygen source gas, a hydrogen source gas and a carbon source gas are introduced in a reaction chamber simultaneously...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
09.12.2015
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a method for removing a Zn impurity element in a vacuum film plating device. In a process of deposition of a non-microcrystalline silicon thin-film battery, an oxygen source gas, a hydrogen source gas and a carbon source gas are introduced in a reaction chamber simultaneously, and the method comprises the particular steps: a first step, introducing the hydrogen source gas and the oxygen source gas in the reaction chamber, making the hydrogen source gas and the oxygen source gas undergo a reaction with the Zn element to generate Zn compounds, controlling the reaction to sustain for 50-200 seconds, stopping glow discharge, and extracting residual gas out of the vacuum cavity; a second step, introducing the carbon source gas to the reaction chamber, making the carbon source gas undergo a reaction with the Zn element to generate Zn compounds, controlling the air pressure to be 0.5-2 mbar and the reaction to sustain for 50-200 seconds, stopping glow discharge, and extracting residual gas out of the vacuum cavity; and allowing the first step and the second step to be conducted alternatively. The method for removing the Zn impurity element in the vacuum film plating device has the characteristics of good removal effect on the Zn impurity element, convenient operation, low cost, and high production efficiency. |
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Bibliography: | Application Number: CN20151341375 |