Preparation method of topology insulator/ferromagnet heterostructure film

• Main Authors: YANG XINSHENG, ZHANG MIN, WEI ZHANTAO, PU XIAOYAN, JIN RONG, ZHAO YONG
• Format: Patent
• Language: English
• Published: 02.12.2015
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a preparation method of a topology insulator/ferromagnet heterostructure film. The preparation method comprises the following steps: (a) N, N-dimethylformamide solution of La0.7Sr0.3MnO3 is prepared; polyvinylpyrrolidone is added in the solution to form a colloid; and the colloid is coated on a substrate for drying, and is put in a tube furnace for insulation annealing treatment to obtain a La0.7Sr0.3MnO3 film; (b) the La0.7Sr0.3MnO3 film is put in a magnetron sputtering instrument; a Bi2Se3 film is deposited on the La0.7Sr0.3MnO3 film through a magnetron sputtering method to obtain a Bi2Se3/La0.7Sr0.3MnO3 heterostructure film; and (c) the Bi2Se3/La0.7Sr0.3MnO3 heterostructure film and selenium particles are sealed in a vacuum quartz tube for post-annealing treatment. The method is simple in operation and low in cost; and the prepared heterostructure film is excellent in performance.