Semiconductor structure
The invention provides a semiconductor structure including a silicon substrate, a buffer layer, a nitride-based epitaxial structure layer and multiple discontinuous strain-releasing layers. The buffer layer is disposed on the silicon substrate. The nitride-based epitaxial structure layer is disposed...
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Format | Patent |
Language | English |
Published |
25.11.2015
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Abstract | The invention provides a semiconductor structure including a silicon substrate, a buffer layer, a nitride-based epitaxial structure layer and multiple discontinuous strain-releasing layers. The buffer layer is disposed on the silicon substrate. The nitride-based epitaxial structure layer is disposed on the buffer layer. The discontinuous strain-releasing layers are disposed between the silicon substrate and the nitride-based epitaxial structure layer, wherein a material of the discontinuous strain-releasing layers is silicon nitride. The semiconductor structure of the present embodiment has the discontinuous strain-releasing layers made of the silicon nitride material disposed between the silicon substrate and the nitride-based epitaxial structure layer, therefore the stress caused from the lattice difference between the nitride-based epitaxial structure layer and the silicon substrate can be effectively reduced. In addition, lattice dislocation extending in a thickness direction and the defect density can also be effectively reduced. Furthermore the overall quality of the semiconductor structure is improved. |
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AbstractList | The invention provides a semiconductor structure including a silicon substrate, a buffer layer, a nitride-based epitaxial structure layer and multiple discontinuous strain-releasing layers. The buffer layer is disposed on the silicon substrate. The nitride-based epitaxial structure layer is disposed on the buffer layer. The discontinuous strain-releasing layers are disposed between the silicon substrate and the nitride-based epitaxial structure layer, wherein a material of the discontinuous strain-releasing layers is silicon nitride. The semiconductor structure of the present embodiment has the discontinuous strain-releasing layers made of the silicon nitride material disposed between the silicon substrate and the nitride-based epitaxial structure layer, therefore the stress caused from the lattice difference between the nitride-based epitaxial structure layer and the silicon substrate can be effectively reduced. In addition, lattice dislocation extending in a thickness direction and the defect density can also be effectively reduced. Furthermore the overall quality of the semiconductor structure is improved. |
Author | TU SHENG-HAN HUANG CHI-FENG |
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RelatedCompanies | GENESIS PHOTONICS INC |
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Snippet | The invention provides a semiconductor structure including a silicon substrate, a buffer layer, a nitride-based epitaxial structure layer and multiple... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Semiconductor structure |
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