Semiconductor structure

The invention provides a semiconductor structure including a silicon substrate, a buffer layer, a nitride-based epitaxial structure layer and multiple discontinuous strain-releasing layers. The buffer layer is disposed on the silicon substrate. The nitride-based epitaxial structure layer is disposed...

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Bibliographic Details
Main Authors HUANG CHI-FENG, TU SHENG-HAN
Format Patent
LanguageEnglish
Published 25.11.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a semiconductor structure including a silicon substrate, a buffer layer, a nitride-based epitaxial structure layer and multiple discontinuous strain-releasing layers. The buffer layer is disposed on the silicon substrate. The nitride-based epitaxial structure layer is disposed on the buffer layer. The discontinuous strain-releasing layers are disposed between the silicon substrate and the nitride-based epitaxial structure layer, wherein a material of the discontinuous strain-releasing layers is silicon nitride. The semiconductor structure of the present embodiment has the discontinuous strain-releasing layers made of the silicon nitride material disposed between the silicon substrate and the nitride-based epitaxial structure layer, therefore the stress caused from the lattice difference between the nitride-based epitaxial structure layer and the silicon substrate can be effectively reduced. In addition, lattice dislocation extending in a thickness direction and the defect density can also be effectively reduced. Furthermore the overall quality of the semiconductor structure is improved.
Bibliography:Application Number: CN201510224653